silicon epit axial planar transistor SS8550 fea tures z collec tor current.(i c = 1.5a z complementary to SS8550. z collector dissipation: p c =0 .3w (t c =25c) applica tions z high collector current. ordering informa tion type no. marking package code SS8550 y2 sot-23 maximum ra ting @ t a=25 unless otherwise specified symbol parameter value units v cbo collector-ba se voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector cur rent -continuous -1.5 a p c collector dissipation 0.3 w t j, t stg junction and storage temperatur e -55~150 a e j l to p view m b c h g d k c b e sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in m m e b c electrical characteristics @ t a=2 5 unless otherwise specified parameter symbol test conditions min typ max unit collector-ba se breakdown voltage v (br)cbo i c =-100 a,i e =0 -40 v collector-em itter breakdown voltage v (br)ceo i c =-0.1ma,i b =0 b -25 v emitter-base breakdow n voltage v (br)ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-40v ,i e =0 -0.1 a collector cut-off current i ceo v ce =-20v ,i b =0 b -0.1 a emitter cut-off current i ebo v eb =-5v ,i c =0 -0.1 a v ce =-1v ,i c =- 100ma 120 400 dc c urrent gain h fe v ce =-1v ,i c =- 800ma 40 collector-em itter saturation voltage v ce(s at) i c =-800ma, i b = -80ma b -0.5 v base-emitter saturation voltage v be(sat) i c =-800ma, i b = -80ma b -1.2 v transition frequency f t v ce =-10v, i c = -50ma f=30mhz 100 mhz output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 pf base-emitter voltage v bef i e =-1.5a -1.6 v 1of 2 a l l d a t a s h e e t . c o m
classifica tion of h fe(1 ) rank l h j rang e 120-200 200-350 300-400 silicon epit axial planar transistor SS8550 typical characteristics @ t a=25 unless otherwise specified 2of 2 a l l d a t a s h e e t . c o m
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